FERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302.

HfO2
ferroelectric materials

Logic-in-memory
circuits

Embedded ferroelectric
non-volatile memory chips

Energy efficient
microcontroller units for IoT

MAJOR PROJECT COMPONENTS

Materials

Materials

In a concerted effort between growth and advanced characterization teams 3ε FERRO will develop HfO2-based ferroelectrics focusing on the compatibility with Si semiconductor processing.
Circuits design

Circuits design

Advanced Logic-in memory (LiM) circuit designs will be employed to explore new ways of merging logic and memory. Coarse-grain LiM will be implemented in suitable platform (see below) using 1C-1T architecture at the BEOL of CMOS circuitry.
Embedded non-volatile memories

Embedded non-volatile memories

Optimized ferroelectric HfO2 layers in a 1T-1C architecture will be integrated with 130 nm CMOS in the back end of line (BEOL) using an advanced 200 mm pilot processing line to demonstrate suitability for eFeRAM solutions.

3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2

This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302.

EU flag

CONSORTIUM

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302. All Rights Reserved. - Powered by puBBuh