Demonstration of BEOL-Compatible Ferroelectric Scaled Hf0.5Zr0.5O2 FeRAM Co-Integrated with 130nm CMOS for Embedded NVM Applications

International Electron Devices Meeting (IEDM) 2019, 10 December, San Francisco

Oral presentation by Terry Francois, Laurent Grenouillet, Jean Coignus, Philippe Blaise, Catherine Carabasse, Nicolas Vaxelaire, Thomas Magis, François Aussenac, Virginie Loup, Catherine Pellissier, Stefan Slesazeck, Viktor Havel, Claudia Richter, Adam Makosiej, Bastien Giraud, Evelyn Breyer, Monica Materano, Philippe Chiquet, Marc Bocquet, Etienne Nowak, Uwe Schroeder, Fred Gaillard, CEA-Leti, NaMLab gGmbH, Aix-Marseille Université

EU flag© {2018} 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302. All Rights Reserved. - Powered by puBBuh