A 2TnC Ferroelectric Memory Gain Cell Suitable for Compute-in-memory and Neuromorphic Application

International Electron Devices Meeting (IEDM) 2019, 11 December, San Francisco

Oral presentation by Stefan Slesazeck, NaMLab gGmbH

EU flag© {2018} 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302. All Rights Reserved. - Powered by puBBuh