Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

: Conference presentations

Oral presentation at International Electron Devices Meeting (IEDM) 2019, 7-11 December, San Francisco

Proceedings: 10.1109/IEDM19573.2019.8993523

by C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, and A. M. Ionescu