Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

International Electron Devices Meeting (IEDM) 2019, 7-11 December, San Francisco

Oral presentation by C. Gastaldi, EPFL

EU flag© {2018} 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302. All Rights Reserved. - Powered by puBBuh