Conference presentations and proceedings

Demonstration of BEOL-Compatible Ferroelectric Hf0.5Zr0.5O2 Scaled FeRAM Co-Integrated with 130nm CMOS for Embedded NVM Applications

: Conference presentations

Oral presentation at International Electron Devices Meeting (IEDM) 2019, 10 December, San Francisco

Proceedings: 10.1109/IEDM19573.2019.8993485

By Terry Francois, Laurent Grenouillet, Jean Coignus, Philippe Blaise, Catherine Carabasse, Nicolas Vaxelaire, Thomas Magis, François Aussenac, Virginie Loup, Catherine Pellissier, Stefan Slesazeck, Viktor Havel, Claudia Richter, Adam Makosiej, Bastien Giraud, Evelyn Breyer, Monica Materano, Philippe Chiquet, Marc Bocquet, Etienne Nowak, Uwe Schroeder, and Fred Gaillard

HfO2-based ferroelectrics: polarization dynamics, nucleation mechanisms, coexistence of phases: an insight using PFM

: Conference presentations

F²Cπ² 2019 (ISAF), July 2019, Switzerland

Invited talk by I. Stolichnov, EPFL

Large remnant polarization in TiN/ZrxHf1-xO2/Ge metal-ferroelectric-semiconductor capacitors

: Conference presentations

F²Cπ² 2019 (ISAF), July 2019, Switzerland

Invited talk by C. Zacharaki, NCSRD

Reliability Improvement by Lanthanum Doping of Hafnium Zirconium Oxide based Ferroelectric Capacitors

: Conference presentations

F²Cπ² 2019 (ISAF), July 2019, Switzerland

Invited talk by U. Schroeder, Namlab

Ferroelectric Hafnium Oxide and its applications in non-volatile memories, negative capacitance elements, and neuromorphic networks

: Conference presentations

F²Cπ² 2019 (ISAF), July 2019, Switzerland

Oral presentation by U. Schroeder, Namlab