Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

: Journal Publications

Published in ACS Appl. Electron. Mater. (23 August 2019)

DOI: https://doi.org/10.1021/acsaelm.9b00367

By Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, and Bertrand Vilquin

The full paper can be found here:

https://hal.archives-ouvertes.fr/hal-02303151