Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design

Published in ACS Applied Electronic Materials (06 September 2020)

DOI: https://doi.org/10.1021/acsaelm.0c00503

By Thomas Szyjka, Lutz BaumgartenTerence MittmannYury MatveyevChristoph SchlueterThomas MikolajickUwe Schroeder, and Martina Müller


EU flag© {2018} 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 780302. All Rights Reserved. - Powered by puBBuh