Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor Journal Publications Published in Applied Physics Letters (12 May 2021) DOI: https://doi.org/10.1063/5.0052129 By Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, and Adrian Mihai Ionescu
