The Role of Interface Defect States in n- and p-Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

The Role of Interface Defect States in n- and p-Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric

: Journal Publications

Published in physica status solidi (a) (19 December 2020)

DOI: 10.1002/pssa.202000500

By Georgia Andra Boni, Cosmin M. Istrate, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Evangelos K. Evangelou, Athanasios Dimoulas, Ioana Pintilie, and Lucian Pintilie