Insertion of an Ultra-thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction

Published in Phys. Status Solidi RRL (09 March 2022)


By Benoît Manchon, Greta SegantiniNicolas BabouxPedro Rojo RomeoRabei BarhoumiIngrid C. InfanteFabien AlibartDominique DrouinBertrand Vilquin, and Damien Deleruyelle

The full paper can be found here:

EU flag© {2018} 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2
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